InGaP/InGaAs/Ge multi-junction solar cells efficiency improvements using interposed transport layers

Kossivi A.  DONKATA; Daniel T.  COTFAS; Petru A.  COTFAS; Katawoura  BELTAKO; Milohum M. DZAGLI

doi:10.51646/jsesd.v14i1.338

Authors

Kossivi A. DONKATA Laboratoire de physique des Matériaux et des Composants à Semi-conducteurs, University of Lomé, 01BP1515 Lomé1, Togo https://orcid.org/0009-0004-9240-907X
Daniel T. COTFAS Department of Electronics and Computers, Transilvania University of Brasov, Eroilor 29, 500036 Brasov, Romania https://orcid.org/0000-0002-9606-8442
Petru A. COTFAS Department of Electronics and Computers, Transilvania University of Brasov, Eroilor 29, 500036 Brasov, Romania https://orcid.org/0000-0002-6301-7841
Katawoura BELTAKO Laboratoire de physique des Matériaux et des Composants à Semi-conducteurs, University of Lomé, 01BP1515 Lomé1, Togo https://orcid.org/0000-0002-8953-7474
Milohum M. DZAGLI 2Laboratoire de Physique des Matériaux et Composants à Semi-conducteurs, University of Lomé, Lomé, 01 BP 1515, Lomé1, Togo 3Regional Centre of Excellence on Electricity Management (CERME), University of Lomé, Lomé, 01 BP 1515, Lomé1, Togo https://orcid.org/0000-0002-6021-3599

DOI:

https://doi.org/10.51646/jsesd.v14i1.338

Keywords:

III-V semiconductor, multi-junction solar cell, ETL WS2, HTL rGO, SCAPS 1D

Abstract

The high conversion efficiency of solar cells can make them more competitive in cost compared to conventional energy sources. Therefore, enhancing photovoltaic cell efficiency remains a critical challenge for researchers and manufacturers. Shockley-Queisser single junction photovoltaic cells are limited to 33.7%, and multi-junction solar cells are the most promising technologies that have achieved remarkable efficiencies exceeding 46%. Modeling and simulation are essential to optimize semiconductor devices and reduce their development time and cost. This study investigates the performance improvement of novel InGaP/InGaAs/Ge triple-junction solar cells by integrating III-V semiconductors. The design includes Tungsten disulfide as an electron transport layer, reduced graphene oxide as a hole transport layer, and intrinsic InGaAs layers to improve efficiency in decreasing the number of InGaP, InGaAs, and Ge layers to reduce manufacturing costs. SCAPS 1D software was used to simulate under a solar irradiance of 1000 Wm^-2 and an air mass of AM1.5G spectrum at 25°C. In addition, a commercial InGaP/InGaAs/Ge solar cell and a mini-solar panel were also simulated, and the obtained current-voltage characteristics were compared with experimental data. A strong correlation was observed between the simulated data and the experimental measurements, confirming the proposed solar cell design's potential, accuracy, and reliability. The new structure produced an impressive power conversion efficiency of 49.83%. The findings suggest a route to manufacturing new multi-junction photovoltaic cells with high efficiency and lower cost.

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