Study of Aluminium, Gallium and Gallium Boron as P-Type Dopants for New-Generation n+np+ Solar Cells
DOI:
https://doi.org/10.51646/jsesd.v13i2.195Keywords:
n np silicon solar cells, gallium doping, boron doping, co-doping, surface passivation.Abstract
Silicon n-type n+np+ solar cells offer many advantages over conventional n+pp+ cells, including better resistance to light-induced degradation and higher conversion efficiency potential. However, the formation of the p+ emitter in n+np+ cells requires high diffusion temperatures and the use of alternative boron dopants is necessary to overcome the limitations of conventional processes. This study explored aluminium, gallium and gallium/boron co-doping as p-type dopants for the fabrication of thin (140 µm) n+np+ solar cells. The results showed that aluminium is not suitable for the formation of the p+ emitter due to its low solid solubility in silicon and its high segregation towards silicon oxide. Gallium required high diffusion temperatures and suffered from a degradation of the concentration profile in later stages of the manufacturing process, leading to poor performing solar cells. Gallium/boron co-doping has proved to be a promising alternative to boron. Thin n+np+ solar cells doped with GaB achieved a maximum conversion efficiency of 13.7%, slightly lower than that of boron-doped cells (14.9%). Optimisation of the GaB diffusion process and surface passivation could further improve the performance of these cells. This study demonstrates the potential of gallium/boron co-doping for the manufacture of new-generation thin n+np+ solar cells. Further research is needed to fully exploit the advantages of this technology and contribute to improving the efficiency and cost of silicon solar cells.
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A. Alatrash, et al., ''Assessing the Viability of Solar and Wind Energy Technologies in Semi-Arid and Arid Regions: A Case Study of Libya’s Climatic Conditions.'' Applied Solar Energy, vol. 80. no. 1. pp. 149–170, 2024. https://doi.org/10.3103/S0003701X24600218 DOI: https://doi.org/10.3103/S0003701X24600218
K. Bakouri, et al., ''Learning lessons from Murzuq-Libya meteorological station: Evaluation criteria and improvement recommendations.'' Solar Energy and Sustainable Development Journal, vol.12, no.1, pp. 30–48. 2023. https://doi.org/10.51646/jsesd.v12i1.149 DOI: https://doi.org/10.51646/jsesd.v12i1.149
H. Korichi, A. Boucheham, A. Bensdira, and M. Kazerane, ''Advancements in Passivation and Metallization Techniques for n-Type Monocrystalline Silicon Solar Cells.'' Solar Energy and Sustainable Development Journal, vol.13, no.2, pp. 151–173. 2024. https://doi.org/10.51646/jsesd.v13i2.185 DOI: https://doi.org/10.51646/jsesd.v13i2.185
M. A. Green, ''Silicon solar cells: Evolution, high-efficiency design and efficiency enhancements,'' Solar Energy, vol. 208, p. 118165, 2023, https://doi.org/10.1016/j.solener.2020.118165.
A. S. Kagilik, A. M. Tawel, ''Performance Analysis of 14 MW Grid-Connected Photovoltaic System'' Solar Energy And Sustainable Development Journal, 4(1), 11–21. https://doi.org/10.51646/jsesd.v4i1.78. DOI: https://doi.org/10.51646/jsesd.v4i1.78
R. Schuh, M. Holm et R. Brendel, ''Origin and impact of process-induced defects in n-type silicon », Physica Status Solidi (RRL).'' Rapid Research Letters, vol. 8, no,1, p. 133–147, 2014, https://doi.org/10.1002/pssr.201308366.
H. Cheng et al., ''Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells,'' Solar Energy Materials and.Solar Cells, vol. 240, p. 111713, 2022, https://doi.org/10.1016/J.SOLMAT.2022.111713. DOI: https://doi.org/10.1016/j.solmat.2022.111713
Q. Wang, et al.,''Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters.'' Solar Energy Materials and Solar Cells, vol. 253, p. 112231, 2023, https://doi.org/10.1016/j.solmat.2023.112231 . DOI: https://doi.org/10.1016/j.solmat.2023.112231
N. E. Grant et al., “Gallium-Doped Silicon for High-Efficiency Commercial Passivated Emitter and Rear Solar Cells,” vol. 2000754, pp. 1–8, 2021, doi: 10.1002/solr.202000754.
J. Hwang, P. Ho, J. Lewis, and R. Campbell, ''Grain boundary diffusion of aluminum in polycrystalline silicon films,'' J. Appl. Phys., vol. 51, no 3, p. 1576–1581, 2008, https://doi.org/110.1063/1.327811. DOI: https://doi.org/10.1063/1.327811
''Grain boundary diffusion of aluminum in polycrystalline silicon films for Journal of Applied Physics - IBM Research'', [Enligne]. Disponible sur: https://research.ibm.com/publications/grain-boundary-diffusion-of-aluminum-in-polycrystalline-silicon-films.
N. Grant, T. Trupke, J. Weber, and K. McIntosh, ''Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells,'' Progress in Photovoltaics Research and Applications, vol. 23, no 12, p. 1904–1914, 2015, https://doi.org/10.1002/solr.202000754. DOI: https://doi.org/10.1002/solr.202000754
L. Shao, J. Liu, Q. Y. Chen, and W. K. Chu, ''Boron diffusion in silicon: The anomalies and control by point defect engineering,'' Materials Science and Engineering: R: Reports, vol. 42, no. 3‑4, 2003, https://doi.org/10.1016/j.mser.2003.08.002. DOI: https://doi.org/10.1016/j.mser.2003.08.002
A. El Amrani, A. Boucheham, A. Guendouzi, B. Labdelli, C. Nasraoui, R. Si-Kaddour, ''Co-Diffusion Processing of p+/n/n+ Structure for n-Type Silicon Solar Cells Using Boron Doped Paper Sheets'', Silicon, vol. 14, no. 1, p. 223–228, 2022, https://doi.org/10.1007/s12. DOI: https://doi.org/10.1007/s12633-020-00809-3
A. Boucheham, A. Elamrani, H. Timlelt, C. Nasraoui et A. Saibi, « Investigation of p+ emitter formation for n-type silicon solar cells application », Materials Research Express, vol. 6, no. 12, p. 125905, 2019, https://doi.org/10.1088/2053-1591/ab5a0c.”. DOI: https://doi.org/10.1088/2053-1591/ab582e
P. Pal, V. Swarnalatha, A. V. N. Rao, A. K. Pandey, H. Tanaka and K. Sato, ''High speed silicon wet anisotropic etching for applications in bulk micromachining: A review,'' Micro and Nano Systems Letters, vol. 9, no 1, p. 15, 2021, https://doi.org/10.1186/s40486-021-”. DOI: https://doi.org/10.1186/s40486-021-00129-0
J. Kim, D. Inns, K. Fogel and D. Sadana, ''Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask,'' Solar Energy Materials and Solar Cells, vol. 94, no 12, p. 2091–2093, 2010, https://doi.org/10.1016/j.solmat.2010.06.026”. DOI: https://doi.org/10.1016/j.solmat.2010.06.026
B. Labdelli et al., ''Influence of Wafer Thickness and Screen-Printing Mesh Counts on the Al-BSF in Crystalline Silicon Solar Cells,'' J. Nano- Electron. Phys., vol. 15, no 6, p. 1–5, 2023, https://doi.org/10.21272/jnep.15(6).06027. DOI: https://doi.org/10.21272/jnep.15(6).06027
A. A. Fashina et al., “Surface texture and optical properties of crystalline silicon substrates,” J. Renew. Sustain. Energy, vol. 7, no. 6, 2015, https://doi.org/10.1063/1.4937117. DOI: https://doi.org/10.1063/1.4937117
A. El Amrani, L. Boutaleb, A. Boucheham, Y. Belkacem, and C. Nasraoui, Investigation of pre-deposition temperature effect on n+-BSF properties in co-diffusion process,” Mater. Res. Express, vol. 5, no. 1, 2018, https://doi.org/10.1088/2053-1591/aaa693. DOI: https://doi.org/10.1088/2053-1591/aaa693
M. Rauer, C. Schmiga, M. Hermle, and S. W. Glunz, “Passivation of Screen-Printed Aluminium-Alloyed Emitters for Back Junction N-Type Silicon Solar Cells,” 24th Eur. Photovolt. Sol. Energy Conf. 21-25 Sept. 2009, Hamburg, Ger. 1059, no. September, pp. 1059–1062, 2009.
L. Zhao, C.L. Zhou, H.L. Li, H.W. Diao, W.J. Wang, ''Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation,'' Solar Energy Materials and Solar Cells, vol. 92, no. 6, 2008, https://doi.org/10.1016/j.solmat.2008.01.018 DOI: https://doi.org/10.1016/j.solmat.2008.01.018
B.Swatowska, T. Stapiński, K. Drabczyk, & P. Panek, ''The role of antireflective coatings in silicon solar cells-The influence on their electrical parameters.'' Optica Applicata, vol. 41, no. 2, 487–492. 2011. https://doi.org/Optica Applicata XLI(2):487
J. Schube, Metallization of Silicon Solar Cells with Passivating Contacts. 2020. [Online]. Available: https://www.reiner-lemoine-stiftung.de/pdf/dissertationen/Dissertation-Joerg_Schube.pdf
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